?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FFB20UP30DN rev. a FFB20UP30DN 20 a, 300 v, ultrafast dual diode FFB20UP30DN features ? ultrafast recovery, t rr = 45 ns (@ i f = 10 a) ? max forward voltage, v f = 1.3 v (@ t c = 25c) ? reverse voltage : v rrm = 300 v ? avalanche energy rated applications ? general p urpose ? switching mode power supply ? free-wheeling diode for motor a pplication ? power switching circuits absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter value unit v rrm peak repetitive reverse voltage 300 v v rwm working peak reverse voltage 300 v v r dc blocking voltage 300 v i f(av) average rectified forward current rating for each diode i f(av) /2 @ t c = 130 c 20 a i fsm non-repetitive peak surge current 60hz single half-sine wave 180 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 2.0 c/w device marking device package r eel size tape width quantity f20up30dn FFB20UP30DNtm to-263ab/d2-pak 13? dia - 800 1. anode 2. cathode 3. anode 1 2 3 1.anode 2.cathode 3.anode 1 to-263ab/d2-pak tm july 2006 20 a, 300 v, ultrafast dual diode the FFB20UP30DN is an ultrafast dual diode with low forward v oltage drop and rugged uis capability. this device is intended for use as freewheeling and c lamping diodes in a variety of switching power supplies and other power switc hing applications. it is specially s uited for use in switc hing power supplies and industrial applic ationa as welder and ups application. ? rohs compliant
2 www.fairchildsemi.com FFB20UP30DN 20 a, 300 v, ultrafast dual diode electrical characteristics (per diode) t c = 25c unless otherwise noted * pulse test: pulse width=300 s, duty cycle= 2% test circuit and waveforms symbol parameter min. typ. max. unit v f * i f = 10 a i f = 10 a t c = 25 c t c = 150 c - - - - 1.3 1.2 v v i r * v r = 300 v v r = 300 v t c = 25 c t c = 150 c - - - - 1 500 a a t rr i f =0.5 a, i rr =1 a, v cc = 30 v i f =1 a, di/dt = 100 a/s, v cc = 30 v i f =10 a, di/dt = 200 a/s, v cc = 195 v t c = 25 c t c = 25 c t c = 25 c - - - - - - 30 35 45 ns ns ns t a t b q rr i f =10a, di/dt = 200a/s, v cc = 195v t c = 25 c t c = 25 c t c = 25 c - - - 11 13 20 - - - ns ns nc w avl avalanche energy (l = 20 mh) 20 - - mj ?2006 fairchild semiconductor corporation FFB20UP30DN rev. a
3 www.fairchildsemi.com FFB20UP30DN 20 a, 300 v, ultrafast dual diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.1 1 10 20 0.0 0.5 1.0 1.5 2.0 t c = 25 o c t c = 100 o c forward voltage , v f [v] forward current , i f [a] 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 t c = 25 o c t c = 100 o c reverse current , i r [ a] reverse voltage , v r [v] 0.1 1 10 100 10 100 400 typical capacitance at 0v = 197. 2 pf capacitance , cj [pf] reverse voltage , v r [v] 100 200 300 400 500 24 28 32 36 i f = 10a tc = 25 o c reverse recovery time , t rr [ns] di/dt [a/ s] 100 200 300 400 500 0 1 2 3 4 5 i f = 10a t c = 25 o c reverse recovery current , i rr [a] di/dt [a/ s] 100 110 120 130 140 150 0 2 4 6 8 10 12 14 average rectified forward current, i f(av) [a] case temperature, t c [ o c] dc ?2006 fairchild semiconductor corporation FFB20UP30DN rev. a
package demensions dimensions in millimeters ultrafast recovery power rectifier ? FFB20UP30DN 20 a, 300 v, ultrafast dual diode to-263ab/d 2 -pak ?2006 fairchild semiconductor corporation FFB20UP30DN rev. a
5 www.fairchildsemi.com FFB20UP30DN 20 a, 300 v, ultrafast dual diode ?2006 fairchild semiconductor corporation FFB20UP30DN rev. a
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